ZXTP01500BGQTC datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTP01500BGQTC Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
3W
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1mA 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
500mV @ 10mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
500V
Current - Collector (Ic) (Max)
150mA
Transition Frequency
60MHz
Frequency - Transition
60MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
4,000
$0.25128
$1.00512
ZXTP01500BGQTC Product Details
ZXTP01500BGQTC Overview
DC current gain in this device equals 100 @ 1mA 10V, which is the ratio of the base current to the collector current.When VCE saturation is 500mV @ 10mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 60MHz.The device exhibits a collector-emitter breakdown at 500V.
ZXTP01500BGQTC Features
the DC current gain for this device is 100 @ 1mA 10V the vce saturation(Max) is 500mV @ 10mA, 50mA a transition frequency of 60MHz
ZXTP01500BGQTC Applications
There are a lot of Diodes Incorporated ZXTP01500BGQTC applications of single BJT transistors.