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NSVBCW68GLT1G

  • NSVBCW68GLT1G
  • NSVBCW68GLT1G

NSVBCW68GLT1G

NSVBCW68GLT1G

ON Semiconductor

NSVBCW68GLT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSVBCW68GLT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 225mW
Power - Max 225mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 700mV
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 10mA 1V
Current - Collector Cutoff (Max) 20nA
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 45V
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.189843 $0.189843
10 $0.179098 $1.79098
100 $0.168960 $16.896
500 $0.159396 $79.698
1000 $0.150374 $150.374
NSVBCW68GLT1G Product Details

NSVBCW68GLT1G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 10mA 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).During maximum operation, collector current can be as low as 800mA volts.

NSVBCW68GLT1G Features


the DC current gain for this device is 120 @ 10mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA

NSVBCW68GLT1G Applications


There are a lot of ON Semiconductor NSVBCW68GLT1G applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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