NSVBCW68GLT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 10mA 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).During maximum operation, collector current can be as low as 800mA volts.
NSVBCW68GLT1G Features
the DC current gain for this device is 120 @ 10mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
NSVBCW68GLT1G Applications
There are a lot of ON Semiconductor NSVBCW68GLT1G applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
