ZXTP08400BFFTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTP08400BFFTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-3 Flat Leads
Number of Pins
3
Weight
48.789529mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
70MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTP08400B
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Power - Max
1.5W
Transistor Application
SWITCHING
Gain Bandwidth Product
70MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 50mA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
190mV @ 40mA, 200mA
Collector Emitter Breakdown Voltage
400V
Transition Frequency
70MHz
Collector Emitter Saturation Voltage
-140mV
Max Breakdown Voltage
400V
Collector Base Voltage (VCBO)
400V
Emitter Base Voltage (VEBO)
-7V
hFE Min
100
Continuous Collector Current
-200mA
Height
1mm
Length
3mm
Width
1.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.21158
$0.63474
6,000
$0.19793
$1.18758
15,000
$0.18428
$2.7642
30,000
$0.18200
$5.46
ZXTP08400BFFTA Product Details
ZXTP08400BFFTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 50mA 5V.The collector emitter saturation voltage is -140mV, giving you a wide variety of design options.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 190mV @ 40mA, 200mA.A -200mA continuous collector voltage is necessary to achieve high efficiency.If the emitter base voltage is kept at -7V, a high level of efficiency can be achieved.As a result, the part has a transition frequency of 70MHz.As a result, it can handle voltages as low as 400V volts.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
ZXTP08400BFFTA Features
the DC current gain for this device is 100 @ 50mA 5V a collector emitter saturation voltage of -140mV the vce saturation(Max) is 190mV @ 40mA, 200mA the emitter base voltage is kept at -7V a transition frequency of 70MHz
ZXTP08400BFFTA Applications
There are a lot of Diodes Incorporated ZXTP08400BFFTA applications of single BJT transistors.