ZXTP08400BFFTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 50mA 5V.The collector emitter saturation voltage is -140mV, giving you a wide variety of design options.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 190mV @ 40mA, 200mA.A -200mA continuous collector voltage is necessary to achieve high efficiency.If the emitter base voltage is kept at -7V, a high level of efficiency can be achieved.As a result, the part has a transition frequency of 70MHz.As a result, it can handle voltages as low as 400V volts.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
ZXTP08400BFFTA Features
the DC current gain for this device is 100 @ 50mA 5V
a collector emitter saturation voltage of -140mV
the vce saturation(Max) is 190mV @ 40mA, 200mA
the emitter base voltage is kept at -7V
a transition frequency of 70MHz
ZXTP08400BFFTA Applications
There are a lot of Diodes Incorporated ZXTP08400BFFTA applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
