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ZXTP08400BFFTA

ZXTP08400BFFTA

ZXTP08400BFFTA

Diodes Incorporated

ZXTP08400BFFTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTP08400BFFTA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-3 Flat Leads
Number of Pins 3
Weight 48.789529mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 70MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXTP08400B
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Power - Max 1.5W
Transistor Application SWITCHING
Gain Bandwidth Product 70MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 190mV @ 40mA, 200mA
Collector Emitter Breakdown Voltage 400V
Transition Frequency 70MHz
Collector Emitter Saturation Voltage -140mV
Max Breakdown Voltage 400V
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) -7V
hFE Min 100
Continuous Collector Current -200mA
Height 1mm
Length 3mm
Width 1.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.21158 $0.63474
6,000 $0.19793 $1.18758
15,000 $0.18428 $2.7642
30,000 $0.18200 $5.46
ZXTP08400BFFTA Product Details

ZXTP08400BFFTA Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 50mA 5V.The collector emitter saturation voltage is -140mV, giving you a wide variety of design options.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 190mV @ 40mA, 200mA.A -200mA continuous collector voltage is necessary to achieve high efficiency.If the emitter base voltage is kept at -7V, a high level of efficiency can be achieved.As a result, the part has a transition frequency of 70MHz.As a result, it can handle voltages as low as 400V volts.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.

ZXTP08400BFFTA Features


the DC current gain for this device is 100 @ 50mA 5V
a collector emitter saturation voltage of -140mV
the vce saturation(Max) is 190mV @ 40mA, 200mA
the emitter base voltage is kept at -7V
a transition frequency of 70MHz

ZXTP08400BFFTA Applications


There are a lot of Diodes Incorporated ZXTP08400BFFTA applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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