Welcome to Hotenda.com Online Store!

logo
userjoin
Home

ZXTP2008ZTA

ZXTP2008ZTA

ZXTP2008ZTA

Diodes Incorporated

ZXTP2008ZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTP2008ZTA Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 51.993025mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC -30V
Max Power Dissipation 2.1W
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating -5.5A
Frequency 110MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXTP2008
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 2.1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 110MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 5.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A 1V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 175mV @ 500mA, 5.5A
Collector Emitter Breakdown Voltage 30V
Transition Frequency 110MHz
Collector Emitter Saturation Voltage -175mV
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 7V
hFE Min 100
Height 1.6mm
Length 4.6mm
Width 2.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.431046 $2.431046
10 $2.293440 $22.9344
100 $2.163623 $216.3623
500 $2.041153 $1020.5765
1000 $1.925616 $1925.616
ZXTP2008ZTA Product Details

ZXTP2008ZTA Overview


In this device, the DC current gain is 100 @ 1A 1V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -175mV, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 175mV @ 500mA, 5.5A.The base voltage of the emitter can be kept at 7V to achieve high efficiency.This device has a current rating of -5.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As a result, the part has a transition frequency of 110MHz.This device can take an input voltage of 30V volts before it breaks down.Collector current can be as low as 5.5A volts at its maximum.

ZXTP2008ZTA Features


the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -175mV
the vce saturation(Max) is 175mV @ 500mA, 5.5A
the emitter base voltage is kept at 7V
the current rating of this device is -5.5A
a transition frequency of 110MHz

ZXTP2008ZTA Applications


There are a lot of Diodes Incorporated ZXTP2008ZTA applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News