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PBHV8115X,115

PBHV8115X,115

PBHV8115X,115

Nexperia USA Inc.

PBHV8115X,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBHV8115X,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 1.5W
Frequency 30MHz
Base Part Number PBHV8115
Pin Count 3
Number of Elements 1
Power Dissipation 520mW
Gain Bandwidth Product 30MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 150V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 50mV @ 20mA, 100mA
Collector Emitter Breakdown Voltage 150V
Collector Emitter Saturation Voltage 33mV
Max Breakdown Voltage 150V
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 6V
hFE Min 10
Max Junction Temperature (Tj) 150°C
Ambient Temperature Range High 150°C
Height 1.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $13.542587 $13.542587
10 $12.776025 $127.76025
100 $12.052854 $1205.2854
500 $11.370617 $5685.3085
1000 $10.726997 $10726.997
PBHV8115X,115 Product Details

PBHV8115X,115 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 50mA 10V.The collector emitter saturation voltage is 33mV, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 50mV @ 20mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.An input voltage of 150V volts is the breakdown voltage.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

PBHV8115X,115 Features


the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of 33mV
the vce saturation(Max) is 50mV @ 20mA, 100mA
the emitter base voltage is kept at 6V

PBHV8115X,115 Applications


There are a lot of Nexperia USA Inc. PBHV8115X,115 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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