MMBTA13-TP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Micro Commercial Co stock available on our website
SOT-23
MMBTA13-TP Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
MMBTA1*
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Number of Elements
1
Power - Max
225mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
10000 @ 150mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 100μA, 100mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
300mA
Transition Frequency
125MHz
Frequency - Transition
125MHz
Power Dissipation-Max (Abs)
0.225W
Turn Off Time-Max (toff)
285ns
Turn On Time-Max (ton)
35ns
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.394000
$0.394
10
$0.371698
$3.71698
100
$0.350659
$35.0659
500
$0.330810
$165.405
1000
$0.312085
$312.085
MMBTA13-TP Product Details
MMBTA13-TP Overview
In this device, the DC current gain is 10000 @ 150mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 100μA, 100mA.As a result, the part has a transition frequency of 125MHz.Collector Emitter Breakdown occurs at 30VV - Maximum voltage.
MMBTA13-TP Features
the DC current gain for this device is 10000 @ 150mA 1V the vce saturation(Max) is 1.5V @ 100μA, 100mA a transition frequency of 125MHz
MMBTA13-TP Applications
There are a lot of Micro Commercial Co MMBTA13-TP applications of single BJT transistors.