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MMBTA13-TP

  • MMBTA13-TP
  • MMBTA13-TP

MMBTA13-TP

MMBTA13-TP

Micro Commercial Co

MMBTA13-TP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Micro Commercial Co stock available on our website

SOT-23

MMBTA13-TP Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Base Part Number MMBTA1*
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Power - Max 225mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 150mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 300mA
Transition Frequency 125MHz
Frequency - Transition 125MHz
Power Dissipation-Max (Abs) 0.225W
Turn Off Time-Max (toff) 285ns
Turn On Time-Max (ton) 35ns
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.394000 $0.394
10 $0.371698 $3.71698
100 $0.350659 $35.0659
500 $0.330810 $165.405
1000 $0.312085 $312.085
MMBTA13-TP Product Details

MMBTA13-TP Overview


In this device, the DC current gain is 10000 @ 150mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 100μA, 100mA.As a result, the part has a transition frequency of 125MHz.Collector Emitter Breakdown occurs at 30VV - Maximum voltage.

MMBTA13-TP Features


the DC current gain for this device is 10000 @ 150mA 1V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
a transition frequency of 125MHz

MMBTA13-TP Applications


There are a lot of Micro Commercial Co MMBTA13-TP applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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