ZXTP2014GTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1A 5V.The collector emitter saturation voltage is -275mV, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 360mV @ 300mA, 3A.Continuous collector voltage should be kept at -4A for high efficiency.An emitter's base voltage can be kept at 7V to gain high efficiency.The current rating of this fuse is -4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In this part, there is a transition frequency of 120MHz.Single BJT transistor can be broken down at a voltage of 140V volts.During maximum operation, collector current can be as low as 4A volts.
ZXTP2014GTA Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of -275mV
the vce saturation(Max) is 360mV @ 300mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is -4A
a transition frequency of 120MHz
ZXTP2014GTA Applications
There are a lot of Diodes Incorporated ZXTP2014GTA applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
