SBC847BWT1G Overview

In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 6V can result in a high level of efficiency.In this part, there is a transition frequency of 100MHz.In extreme cases, the collector current can be as low as 100mA volts.

SBC847BWT1G Features

the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

SBC847BWT1G Applications

There are a lot of ON Semiconductor SBC847BWT1G applications of single BJT transistors.

• Driver
• Inverter
• Interface
• Muting