2N5088TA Overview
In this device, the DC current gain is 300 @ 100μA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV allows maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 1mA, 10mA.The emitter base voltage can be kept at 4.5V for high efficiency.This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As a result, the part has a transition frequency of 50MHz.Breakdown input voltage is 30V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
2N5088TA Features
the DC current gain for this device is 300 @ 100μA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 100mA
a transition frequency of 50MHz
2N5088TA Applications
There are a lot of ON Semiconductor 2N5088TA applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
