Welcome to Hotenda.com Online Store!

logo
userjoin
Home

BST60,115

  • BST60,115
  • BST60,115

BST60,115

BST60,115

Nexperia USA Inc.

BST60,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BST60,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-243AA
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.75
Terminal Position SINGLE
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BST60
Pin Count 3
JESD-30 Code R-PSSO-F3
Qualification Status Not Qualified
Number of Elements 1
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Case Connection COLLECTOR
Power - Max 1.3W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 500mA 10V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 1.3V @ 500μA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 1A
Transition Frequency 200MHz
Frequency - Transition 200MHz
VCEsat-Max 1.3 V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.759840 $0.75984
10 $0.716830 $7.1683
100 $0.676255 $67.6255
500 $0.637976 $318.988
1000 $0.601864 $601.864
BST60,115 Product Details

BST60,115 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 2000 @ 500mA 10V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.3V @ 500μA, 500mA.The part has a transition frequency of 200MHz.The device has a 45V maximal voltage - Collector Emitter Breakdown.

BST60,115 Features


the DC current gain for this device is 2000 @ 500mA 10V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
a transition frequency of 200MHz

BST60,115 Applications


There are a lot of Nexperia USA Inc. BST60,115 applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

Related Part Number

BCW68G
Rochester Electronics, LLC
BCW68G
$0 $/piece
BC857CQAZ
Nexperia USA Inc.
BC857CQAZ
$0 $/piece
PZT2222AT1G
ON Semiconductor
PZT2222AT1G
$0 $/piece
KSP8098TA
ON Semiconductor
KSP8098TA
$0 $/piece
SBC847BWT1G
ON Semiconductor
SBC847BWT1G
$0 $/piece
KSC2383OTA
ON Semiconductor
KSC2383OTA
$0 $/piece
2N3636L
Microsemi Corporation
2N3636L
$0 $/piece
BCP55
ON Semiconductor
BCP55
$0 $/piece
BC558ABU
Rochester Electronics, LLC
BC558ABU
$0 $/piece
PBSS5580PA,115
Nexperia USA Inc.
PBSS5580PA,115
$0 $/piece
view all related

Get Subscriber

Enter Your Email Address, Get the Latest News