KSC2383OTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSC2383OTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body (Formed Leads)
Number of Pins
3
Weight
371.1027mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
160V
Max Power Dissipation
900mW
Terminal Position
BOTTOM
Current Rating
1A
Frequency
100MHz
Base Part Number
KSC2383
Number of Elements
1
Element Configuration
Single
Power Dissipation
900mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
160V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 200mA 5V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 50mA, 500mA
Collector Emitter Breakdown Voltage
160V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
1.5V
Max Breakdown Voltage
160V
Collector Base Voltage (VCBO)
160V
Emitter Base Voltage (VEBO)
6V
hFE Min
60
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.421920
$0.42192
10
$0.398038
$3.98038
100
$0.375507
$37.5507
500
$0.354252
$177.126
1000
$0.334200
$334.2
KSC2383OTA Product Details
KSC2383OTA Overview
This device has a DC current gain of 100 @ 200mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Parts of this part have transition frequencies of 100MHz.Breakdown input voltage is 160V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
KSC2383OTA Features
the DC current gain for this device is 100 @ 200mA 5V a collector emitter saturation voltage of 1.5V the vce saturation(Max) is 1.5V @ 50mA, 500mA the emitter base voltage is kept at 6V the current rating of this device is 1A a transition frequency of 100MHz
KSC2383OTA Applications
There are a lot of ON Semiconductor KSC2383OTA applications of single BJT transistors.