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MMST6427-7-F

MMST6427-7-F

MMST6427-7-F

Diodes Incorporated

MMST6427-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

MMST6427-7-F Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 6.010099mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MMST6427
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Single
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500μA, 500mA
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 1.2V
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 12V
hFE Min 10000
Continuous Collector Current 500mA
Height 1mm
Length 2.2mm
Width 1.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.645040 $3.64504
10 $3.438717 $34.38717
100 $3.244073 $324.4073
500 $3.060446 $1530.223
1000 $2.887213 $2887.213
MMST6427-7-F Product Details

MMST6427-7-F Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20000 @ 100mA 5V.As it features a collector emitter saturation voltage of 1.2V, it allows for maximum design flexibility.When VCE saturation is 1.5V @ 500μA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Maintaining the continuous collector voltage at 500mA is essential for high efficiency.If the emitter base voltage is kept at 12V, a high level of efficiency can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.Input voltage breakdown is available at 40V volts.A maximum collector current of 500mA volts is possible.

MMST6427-7-F Features


the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 500mA

MMST6427-7-F Applications


There are a lot of Diodes Incorporated MMST6427-7-F applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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