ZXTP5401FLTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 60 @ 10mA 5V.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 5mA, 50mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.100MHz is present in the transition frequency.Single BJT transistor can take a breakdown input voltage of 150V volts.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
ZXTP5401FLTA Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
ZXTP5401FLTA Applications
There are a lot of Diodes Incorporated ZXTP5401FLTA applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
