MMBT2222A RFG Overview

This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.There is no device package available from the supplier for this product.A 40V maximal voltage - Collector Emitter Breakdown is present in the device.

MMBT2222A RFG Features

the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of SOT-23

MMBT2222A RFG Applications

There are a lot of Taiwan Semiconductor Corporation MMBT2222A RFG applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface