PBHV9050ZF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBHV9050ZF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
700mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
350mV @ 20mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
500V
Current - Collector (Ic) (Max)
250mA
Frequency - Transition
50MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
4,000
$0.19800
$0.792
PBHV9050ZF Product Details
PBHV9050ZF Overview
DC current gain in this device equals 100 @ 10mA 10V, which is the ratio of the base current to the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 20mA, 100mA.A 500V maximal voltage - Collector Emitter Breakdown is present in the device.
PBHV9050ZF Features
the DC current gain for this device is 100 @ 10mA 10V the vce saturation(Max) is 350mV @ 20mA, 100mA
PBHV9050ZF Applications
There are a lot of Nexperia USA Inc. PBHV9050ZF applications of single BJT transistors.