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PBHV9050ZF

PBHV9050ZF

PBHV9050ZF

Nexperia USA Inc.

PBHV9050ZF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBHV9050ZF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 700mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 350mV @ 20mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 500V
Current - Collector (Ic) (Max) 250mA
Frequency - Transition 50MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
4,000 $0.19800 $0.792
PBHV9050ZF Product Details

PBHV9050ZF Overview


DC current gain in this device equals 100 @ 10mA 10V, which is the ratio of the base current to the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 20mA, 100mA.A 500V maximal voltage - Collector Emitter Breakdown is present in the device.

PBHV9050ZF Features


the DC current gain for this device is 100 @ 10mA 10V
the vce saturation(Max) is 350mV @ 20mA, 100mA

PBHV9050ZF Applications


There are a lot of Nexperia USA Inc. PBHV9050ZF applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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