ZXTP717MATA Overview

This device has a DC current gain of 300 @ 100mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -310mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 310mV @ 150mA, 4A.A -4A continuous collector voltage is necessary to achieve high efficiency.Keeping the emitter base voltage at -7.5V allows for a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 110MHz.This device can take an input voltage of 12V volts before it breaks down.A maximum collector current of 4A volts is possible.

ZXTP717MATA Features

the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of -310mV
the vce saturation(Max) is 310mV @ 150mA, 4A
the emitter base voltage is kept at -7.5V
a transition frequency of 110MHz

ZXTP717MATA Applications

There are a lot of Diodes Incorporated ZXTP717MATA applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver