STN83003 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
STN83003 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 weeks ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Subcategory
Other Transistors
Max Power Dissipation
1.6W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STN83
Pin Count
4
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.6W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
16 @ 350mA 5V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 500mA
Collector Emitter Breakdown Voltage
400V
Collector Emitter Saturation Voltage
1V
Max Breakdown Voltage
400V
Emitter Base Voltage (VEBO)
12V
Height
1.8mm
Length
6.5mm
Width
3.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.401952
$0.401952
10
$0.379200
$3.792
100
$0.357736
$35.7736
500
$0.337487
$168.7435
1000
$0.318384
$318.384
STN83003 Product Details
STN83003 Overview
This device has a DC current gain of 16 @ 350mA 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 1V ensures maximum design flexibility.A VCE saturation (Max) of 500mV @ 100mA, 500mA means Ic has reached its maximum value(saturated).The base voltage of the emitter can be kept at 12V to achieve high efficiency.There is a breakdown input voltage of 400V volts that it can take.The maximum collector current is 1.5A volts.
STN83003 Features
the DC current gain for this device is 16 @ 350mA 5V a collector emitter saturation voltage of 1V the vce saturation(Max) is 500mV @ 100mA, 500mA the emitter base voltage is kept at 12V
STN83003 Applications
There are a lot of STMicroelectronics STN83003 applications of single BJT transistors.