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UM2222AU3T106

  • UM2222AU3T106
  • UM2222AU3T106

UM2222AU3T106

UM2222AU3T106

ROHM Semiconductor

UM2222AU3T106 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

UM2222AU3T106 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 200mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 600mA
Frequency - Transition 300MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.47000 $0.47
500 $0.4653 $232.65
1000 $0.4606 $460.6
1500 $0.4559 $683.85
2000 $0.4512 $902.4
2500 $0.4465 $1116.25
UM2222AU3T106 Product Details

UM2222AU3T106 Overview


In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).A 40V maximal voltage - Collector Emitter Breakdown is present in the device.

UM2222AU3T106 Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA

UM2222AU3T106 Applications


There are a lot of ROHM Semiconductor UM2222AU3T106 applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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