2SB1690TL Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 270 @ 200mA 2V DC current gain.A collector emitter saturation voltage of -120mV allows maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 180mV @ 50mA, 1A.Continuous collector voltages should be kept at -2A to achieve high efficiency.Keeping the emitter base voltage at -6V allows for a high level of efficiency.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In the part, the transition frequency is 360MHz.The breakdown input voltage is 12V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
2SB1690TL Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of -120mV
the vce saturation(Max) is 180mV @ 50mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -2A
a transition frequency of 360MHz
2SB1690TL Applications
There are a lot of ROHM Semiconductor 2SB1690TL applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
