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2N5339

2N5339

2N5339

Microsemi Corporation

2N5339 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N5339 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Package / Case TO-39
Number of Pins 3
Packaging Bulk
Published 2007
JESD-609 Code e0
Pbfree Code no
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Max Power Dissipation 1W
Terminal Position BOTTOM
Terminal Form WIRE
Number of Elements 1
Polarity NPN
Configuration SINGLE
Power Dissipation 1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 5A
JEDEC-95 Code TO-205AD
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 6V
DC Current Gain-Min (hFE) 40
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $32.28410 $3228.41
2N5339 Product Details

2N5339 Overview


Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.In extreme cases, the collector current can be as low as 5A volts.

2N5339 Features


the emitter base voltage is kept at 6V

2N5339 Applications


There are a lot of Microsemi Corporation 2N5339 applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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