2N5339 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
2N5339 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Package / Case
TO-39
Number of Pins
3
Packaging
Bulk
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN LEAD
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Number of Elements
1
Polarity
NPN
Configuration
SINGLE
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
5A
JEDEC-95 Code
TO-205AD
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
6V
DC Current Gain-Min (hFE)
40
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$32.28410
$3228.41
2N5339 Product Details
2N5339 Overview
Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.In extreme cases, the collector current can be as low as 5A volts.
2N5339 Features
the emitter base voltage is kept at 6V
2N5339 Applications
There are a lot of Microsemi Corporation 2N5339 applications of single BJT transistors.