ZXTN07045EFFTA Overview
This device has a DC current gain of 500 @ 100mA 2V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 280mV, which allows maximum flexibilSingle BJT transistory in design.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 280mV @ 80mA, 4A.An emitter's base voltage can be kept at 7V to gain high efficiency.The part has a transition frequency of 190MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 4A volts can be achieved.
ZXTN07045EFFTA Features
the DC current gain for this device is 500 @ 100mA 2V
a collector emitter saturation voltage of 280mV
the vce saturation(Max) is 280mV @ 80mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 190MHz
ZXTN07045EFFTA Applications
There are a lot of Diodes Incorporated ZXTN07045EFFTA applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
