FGB20N6S2 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
FGB20N6S2 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Supplier Device Package
TO-263AB
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
600V
Max Power Dissipation
125W
Current Rating
28A
Element Configuration
Single
Input Type
Standard
Power - Max
125W
Rise Time
4.5ns
Collector Emitter Voltage (VCEO)
2.7V
Max Collector Current
28A
Collector Emitter Breakdown Voltage
600V
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
28A
Test Condition
390V, 7A, 25Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 7A
Gate Charge
30nC
Current - Collector Pulsed (Icm)
40A
Td (on/off) @ 25°C
7.7ns/87ns
Switching Energy
25μJ (on), 58μJ (off)
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
400
$1.87530
$750.12
FGB20N6S2 Product Details
FGB20N6S2 Description
The FGH20N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and high avalanche capability (UIS). The FGH20N6S2 LGC device shortens delay times and reduces the gate drive's power requirement. The Onsemi FGH20N6S2 is ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times, and UIS capability are essential.