IPL65R099C7AUMA1

new-10%

Manufacturer part number:IPL65R099C7AUMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 4VSON

Case Package:SOT-23

Datasheet:IPL65R099C7AUMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	4-PowerTSFN
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	CoolMOS™ C7
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	2A (4 Weeks)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	128W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	99m Ω @ 5.9A, 10V
Vgs(th) (Max) @ Id	4V @ 590μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	2140pF @ 400V
Current - Continuous Drain (Id) @ 25°C	21A Tc
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Rise Time	5ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	89 ns
Continuous Drain Current (ID)	21A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	650V
Drain-source On Resistance-Max	0.099Ohm
Pulsed Drain Current-Max (IDM)	100A
Avalanche Energy Rating (Eas)	118 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead