Name: IRF1405PBF
Brand: Infineon Technologies
SKU: IRF1405PBF
Price: 3.24000 USD
Availability: InStock

new-10%

IRF1405PBF

Manufacturer part number:IRF1405PBF

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) N-Channel Tube 5.3m Ω @ 101A, 10V ±20V 5480pF @ 25V 260nC @ 10V TO-220-3

Case Package:SOT-23

Datasheet:IRF1405PBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	HEXFET®
Published	2004
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Resistance	5.3mOhm
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory	FET General Purpose Power
Voltage - Rated DC	55V
Technology	MOSFET (Metal Oxide)
Current Rating	169A
Lead Pitch	2.54mm
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	330W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	330W
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.3m Ω @ 101A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5480pF @ 25V
Current - Continuous Drain (Id) @ 25°C	169A Tc
Gate Charge (Qg) (Max) @ Vgs	260nC @ 10V
Rise Time	190ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	110 ns
Turn-Off Delay Time	130 ns
Continuous Drain Current (ID)	169A
Threshold Voltage	4V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	75A
Drain to Source Breakdown Voltage	55V
Pulsed Drain Current-Max (IDM)	680A
Dual Supply Voltage	55V
Avalanche Energy Rating (Eas)	560 mJ
Recovery Time	130 ns
Max Junction Temperature (Tj)	175°C
Nominal Vgs	4 V
Height	19.8mm
Length	10.668mm
Width	4.826mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

IRF1405PBF Product Details

IRF1405PBF Description

Modern processing methods are used in this Stripe Planar design of HEXFET? Power MOSFETs to produce extraordinarily low on-resistance per silicon area. This HEXFET power MOSFET also has increased repeating avalanche rating, a rapid switching speed, and a junction operating temperature of 175??C. These advantages work together to make this design a very effective and dependable tool for usage in a range of applications.