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IRF1405PBF

IRF1405PBF

IRF1405PBF

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tube 5.3m Ω @ 101A, 10V ±20V 5480pF @ 25V 260nC @ 10V TO-220-3

SOT-23

IRF1405PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2004
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 5.3mOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Current Rating 169A
Lead Pitch 2.54mm
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 330W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 330W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.3m Ω @ 101A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5480pF @ 25V
Current - Continuous Drain (Id) @ 25°C 169A Tc
Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V
Rise Time 190ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 130 ns
Continuous Drain Current (ID) 169A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 75A
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 680A
Dual Supply Voltage 55V
Avalanche Energy Rating (Eas) 560 mJ
Recovery Time 130 ns
Max Junction Temperature (Tj) 175°C
Nominal Vgs 4 V
Height 19.8mm
Length 10.668mm
Width 4.826mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.97000 $2.97
10 $2.69400 $26.94
100 $2.19540 $219.54
500 $1.74234 $871.17
1,000 $1.47048 $1.47048
IRF1405PBF Product Details

IRF1405PBF Description


Modern processing methods are used in this Stripe Planar design of HEXFET? Power MOSFETs to produce extraordinarily low on-resistance per silicon area. This HEXFET power MOSFET also has increased repeating avalanche rating, a rapid switching speed, and a junction operating temperature of 175??C. These advantages work together to make this design a very effective and dependable tool for usage in a range of applications.



IRF1405PBF Features


  • Advanced Process Technology

  • Ultra Low On-Resistance

  • Dynamic dv/dt Rating

  • 175??C Operating Temperature

  • Fast Switching

  • Repetitive Avalanche Allowed up to Tjmax

  • Lead-Free



IRF1405PBF Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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