CSD19532Q5BT

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Manufacturer part number:CSD19532Q5BT

Manufacturer:Texas Instruments

Description:CSD19532Q5BT datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD19532Q5BT Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Surface Mount	YES
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	CSD19532
Number of Elements	1
Power Dissipation-Max	3.1W Ta 195W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.9m Ω @ 17A, 10V
Vgs(th) (Max) @ Id	3.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4810pF @ 50V
Current - Continuous Drain (Id) @ 25°C	100A Ta
Gate Charge (Qg) (Max) @ Vgs	62nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	100A
Drain Current-Max (Abs) (ID)	17A
Drain-source On Resistance-Max	0.0057Ohm
Pulsed Drain Current-Max (IDM)	400A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	274 mJ
Length	5mm
Width	6mm
Thickness	950μm
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead