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BCV29H6327XTSA1

BCV29H6327XTSA1

BCV29H6327XTSA1

Infineon Technologies

BCV29H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BCV29H6327XTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 26 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series Automotive, AEC-Q101
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 1W
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Polarity NPN
Element Configuration Single
Case Connection COLLECTOR
Power - Max 1W
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 100μA, 100mA
Collector Emitter Breakdown Voltage 30V
Transition Frequency 150MHz
Frequency - Transition 150MHz
Collector Base Voltage (VCBO) 40V
hFE Min 4000
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.200938 $1.200938
10 $1.132960 $11.3296
100 $1.068830 $106.883
500 $1.008330 $504.165
1000 $0.951255 $951.255
BCV29H6327XTSA1 Product Details

BCV29H6327XTSA1 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20000 @ 100mA 5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 100μA, 100mA.As a result, the part has a transition frequency of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

BCV29H6327XTSA1 Features


the DC current gain for this device is 20000 @ 100mA 5V
the vce saturation(Max) is 1V @ 100μA, 100mA
a transition frequency of 150MHz

BCV29H6327XTSA1 Applications


There are a lot of Infineon Technologies BCV29H6327XTSA1 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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