BCV29H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
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BCV29H6327XTSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Series
Automotive, AEC-Q101
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
1W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
1W
Transistor Application
AMPLIFIER
Halogen Free
Halogen Free
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
20000 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 100μA, 100mA
Collector Emitter Breakdown Voltage
30V
Transition Frequency
150MHz
Frequency - Transition
150MHz
Collector Base Voltage (VCBO)
40V
hFE Min
4000
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.200938
$1.200938
10
$1.132960
$11.3296
100
$1.068830
$106.883
500
$1.008330
$504.165
1000
$0.951255
$951.255
BCV29H6327XTSA1 Product Details
BCV29H6327XTSA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20000 @ 100mA 5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 100μA, 100mA.As a result, the part has a transition frequency of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BCV29H6327XTSA1 Features
the DC current gain for this device is 20000 @ 100mA 5V the vce saturation(Max) is 1V @ 100μA, 100mA a transition frequency of 150MHz
BCV29H6327XTSA1 Applications
There are a lot of Infineon Technologies BCV29H6327XTSA1 applications of single BJT transistors.