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KSC5042MSTU

KSC5042MSTU

KSC5042MSTU

ON Semiconductor

KSC5042MSTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSC5042MSTU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Supplier Device Package TO-126-3
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 6W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA 5V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 5V @ 4mA, 20mA
Voltage - Collector Emitter Breakdown (Max) 900V
Current - Collector (Ic) (Max) 100mA
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.311563 $2.311563
10 $2.180720 $21.8072
100 $2.057283 $205.7283
500 $1.940833 $970.4165
1000 $1.830975 $1830.975
KSC5042MSTU Product Details

KSC5042MSTU Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 10mA 5V.When VCE saturation is 5V @ 4mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-126-3 contains the product.There is a 900V maximal voltage in the device due to collector-emitter breakdown.

KSC5042MSTU Features


the DC current gain for this device is 30 @ 10mA 5V
the vce saturation(Max) is 5V @ 4mA, 20mA
the supplier device package of TO-126-3

KSC5042MSTU Applications


There are a lot of ON Semiconductor KSC5042MSTU applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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