KSC5042MSTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSC5042MSTU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126-3
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
6W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 10mA 5V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
5V @ 4mA, 20mA
Voltage - Collector Emitter Breakdown (Max)
900V
Current - Collector (Ic) (Max)
100mA
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.311563
$2.311563
10
$2.180720
$21.8072
100
$2.057283
$205.7283
500
$1.940833
$970.4165
1000
$1.830975
$1830.975
KSC5042MSTU Product Details
KSC5042MSTU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 10mA 5V.When VCE saturation is 5V @ 4mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-126-3 contains the product.There is a 900V maximal voltage in the device due to collector-emitter breakdown.
KSC5042MSTU Features
the DC current gain for this device is 30 @ 10mA 5V the vce saturation(Max) is 5V @ 4mA, 20mA the supplier device package of TO-126-3
KSC5042MSTU Applications
There are a lot of ON Semiconductor KSC5042MSTU applications of single BJT transistors.