KSA539CYTA Overview
This device has a DC current gain of 120 @ 50mA 1V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -250mV, giving you a wide variety of design options.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 15mA, 150mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -200mA current rating.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 200mA volts.
KSA539CYTA Features
the DC current gain for this device is 120 @ 50mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 500mV @ 15mA, 150mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
KSA539CYTA Applications
There are a lot of ON Semiconductor KSA539CYTA applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting