KSA539CYTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSA539CYTA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Weight
240mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-45V
Max Power Dissipation
400mW
Terminal Position
BOTTOM
Current Rating
-200mA
Base Part Number
KSA539
Number of Elements
1
Element Configuration
Single
Power Dissipation
400mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 50mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 15mA, 150mA
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
-250mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
-60V
Emitter Base Voltage (VEBO)
-5V
hFE Min
40
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.331601
$0.331601
10
$0.312831
$3.12831
100
$0.295124
$29.5124
500
$0.278419
$139.2095
1000
$0.262660
$262.66
KSA539CYTA Product Details
KSA539CYTA Overview
This device has a DC current gain of 120 @ 50mA 1V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -250mV, giving you a wide variety of design options.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 15mA, 150mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -200mA current rating.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 200mA volts.
KSA539CYTA Features
the DC current gain for this device is 120 @ 50mA 1V a collector emitter saturation voltage of -250mV the vce saturation(Max) is 500mV @ 15mA, 150mA the emitter base voltage is kept at -5V the current rating of this device is -200mA
KSA539CYTA Applications
There are a lot of ON Semiconductor KSA539CYTA applications of single BJT transistors.