MPSA18RLRA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MPSA18RLRA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1998
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
LOW NOISE
Subcategory
Other Transistors
Voltage - Rated DC
45V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
200mA
Frequency
160MHz
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
MPSA18
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
160MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
500 @ 10mA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
160MHz
Collector Emitter Saturation Voltage
80mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
45V
Emitter Base Voltage (VEBO)
6.5V
hFE Min
400
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.04000
$0.04
500
$0.0396
$19.8
1000
$0.0392
$39.2
1500
$0.0388
$58.2
2000
$0.0384
$76.8
2500
$0.038
$95
MPSA18RLRA Product Details
MPSA18RLRA Overview
DC current gain in this device equals 500 @ 10mA 5V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 80mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 5mA, 50mA.An emitter's base voltage can be kept at 6.5V to gain high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 200mA.In the part, the transition frequency is 160MHz.A breakdown input voltage of 45V volts can be used.The maximum collector current is 200mA volts.
MPSA18RLRA Features
the DC current gain for this device is 500 @ 10mA 5V a collector emitter saturation voltage of 80mV the vce saturation(Max) is 300mV @ 5mA, 50mA the emitter base voltage is kept at 6.5V the current rating of this device is 200mA a transition frequency of 160MHz
MPSA18RLRA Applications
There are a lot of ON Semiconductor MPSA18RLRA applications of single BJT transistors.