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BCX5310E6327HTSA1

BCX5310E6327HTSA1

BCX5310E6327HTSA1

Infineon Technologies

BCX5310E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BCX5310E6327HTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-243AA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BCX53
Power - Max 2W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 125MHz
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.09000 $0.09
500 $0.0891 $44.55
1000 $0.0882 $88.2
1500 $0.0873 $130.95
2000 $0.0864 $172.8
2500 $0.0855 $213.75
BCX5310E6327HTSA1 Product Details

BCX5310E6327HTSA1 Overview


In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.There is a 80V maximal voltage in the device due to collector-emitter breakdown.

BCX5310E6327HTSA1 Features


the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA

BCX5310E6327HTSA1 Applications


There are a lot of Infineon Technologies BCX5310E6327HTSA1 applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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