BCX6916H6327XTSA1 Overview
In this device, the DC current gain is 100 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Single BJT transistor can be broken down at a voltage of 20V volts.Supplier package PG-SOT89 contains the product.Device displays Collector Emitter Breakdown (20V maximal voltage).In extreme cases, the collector current can be as low as 1A volts.
BCX6916H6327XTSA1 Features
the DC current gain for this device is 100 @ 500mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the supplier device package of PG-SOT89
BCX6916H6327XTSA1 Applications
There are a lot of Infineon Technologies BCX6916H6327XTSA1 applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
