PBSS3540MB,315 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 10mA 2V.A collector emitter saturation voltage of -50mV ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 50mV @ 500μA, 10mA.Keeping the emitter base voltage at -6V can result in a high level of efficiency.Single BJT transistor can take a breakdown input voltage of 40V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

PBSS3540MB,315 Features

the DC current gain for this device is 200 @ 10mA 2V
a collector emitter saturation voltage of -50mV
the vce saturation(Max) is 50mV @ 500μA, 10mA
the emitter base voltage is kept at -6V

PBSS3540MB,315 Applications

There are a lot of Nexperia USA Inc. PBSS3540MB,315 applications of single BJT transistors.

• Inverter
• Muting
• Interface
• Driver