2SC4081U3T106R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SC4081U3T106R Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
200mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
150mA
Frequency - Transition
180MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.208000
$0.208
10
$0.196226
$1.96226
100
$0.185119
$18.5119
500
$0.174641
$87.3205
1000
$0.164755
$164.755
2SC4081U3T106R Product Details
2SC4081U3T106R Overview
This device has a DC current gain of 120 @ 1mA 6V, which is the ratio between the collector current and the base current.When VCE saturation is 400mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).This device displays a 50V maximum voltage - Collector Emitter Breakdown.
2SC4081U3T106R Features
the DC current gain for this device is 120 @ 1mA 6V the vce saturation(Max) is 400mV @ 5mA, 50mA
2SC4081U3T106R Applications
There are a lot of ROHM Semiconductor 2SC4081U3T106R applications of single BJT transistors.