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2SC4081U3T106R

2SC4081U3T106R

2SC4081U3T106R

ROHM Semiconductor

2SC4081U3T106R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SC4081U3T106R Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 200mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 150mA
Frequency - Transition 180MHz
RoHS StatusROHS3 Compliant
In-Stock:25919 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.208000$0.208
10$0.196226$1.96226
100$0.185119$18.5119
500$0.174641$87.3205
1000$0.164755$164.755

2SC4081U3T106R Product Details

2SC4081U3T106R Overview


This device has a DC current gain of 120 @ 1mA 6V, which is the ratio between the collector current and the base current.When VCE saturation is 400mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).This device displays a 50V maximum voltage - Collector Emitter Breakdown.

2SC4081U3T106R Features


the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 400mV @ 5mA, 50mA

2SC4081U3T106R Applications


There are a lot of ROHM Semiconductor 2SC4081U3T106R applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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