TIP141G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
TIP141G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Number of Pins
3
Weight
6.500007g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
125W
Peak Reflow Temperature (Cel)
260
Current Rating
10A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
TIP14*
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
125W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 5A 4V
Current - Collector Cutoff (Max)
2mA
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 10A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
4MHz
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
1000
Height
12.2mm
Length
15.2mm
Width
4.9mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.91000
$1.91
30
$1.62000
$48.6
120
$1.38033
$165.6396
510
$1.13410
$578.391
1,020
$0.93969
$0.93969
TIP141G Product Details
TIP141G Overview
In this device, the DC current gain is 1000 @ 5A 4V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 40mA, 10A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Its current rating is 10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.A transition frequency of 4MHz is present in the part.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
TIP141G Features
the DC current gain for this device is 1000 @ 5A 4V a collector emitter saturation voltage of 2V the vce saturation(Max) is 3V @ 40mA, 10A the emitter base voltage is kept at 5V the current rating of this device is 10A a transition frequency of 4MHz
TIP141G Applications
There are a lot of ON Semiconductor TIP141G applications of single BJT transistors.