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TIP141G

TIP141G

TIP141G

ON Semiconductor

TIP141G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

TIP141G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 125W
Peak Reflow Temperature (Cel) 260
Current Rating 10A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number TIP14*
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 125W
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A 4V
Current - Collector Cutoff (Max) 2mA
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 10A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage 2V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 1000
Height 12.2mm
Length 15.2mm
Width 4.9mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.91000 $1.91
30 $1.62000 $48.6
120 $1.38033 $165.6396
510 $1.13410 $578.391
1,020 $0.93969 $0.93969
TIP141G Product Details

TIP141G Overview


In this device, the DC current gain is 1000 @ 5A 4V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 40mA, 10A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Its current rating is 10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.A transition frequency of 4MHz is present in the part.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.

TIP141G Features


the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 4MHz

TIP141G Applications


There are a lot of ON Semiconductor TIP141G applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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