MMBT100 Overview
In this device, the DC current gain is 100 @ 150mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 20mA, 200mA.The emitter base voltage can be kept at 6V for high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).250MHz is present in the transition frequency.A breakdown input voltage of 45V volts can be used.Collector current can be as low as 500mA volts at its maximum.
MMBT100 Features
the DC current gain for this device is 100 @ 150mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 20mA, 200mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 250MHz
MMBT100 Applications
There are a lot of ON Semiconductor MMBT100 applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
