JANTXV2N2222AUB Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Product comes in the supplier's device package UB.The device exhibits a collector-emitter breakdown at 50V.Maximum collector currents can be below 800mA volts.

JANTXV2N2222AUB Features

the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of UB

JANTXV2N2222AUB Applications

There are a lot of Microsemi Corporation JANTXV2N2222AUB applications of single BJT transistors.

• Inverter
• Muting
• Driver
• Interface