FMMT458TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FMMT458TA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2017
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
400V
Max Power Dissipation
500mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
225mA
Frequency
50MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FMMT458
Number of Elements
1
Element Configuration
Single
Power Dissipation
500mW
Transistor Application
SWITCHING
Gain Bandwidth Product
50MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
225mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 50mA 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
500mV @ 6mA, 50mA
Collector Emitter Breakdown Voltage
400V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
400V
Collector Base Voltage (VCBO)
400V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
225mA
Height
1.1mm
Length
3mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.46000
$0.46
500
$0.4554
$227.7
1000
$0.4508
$450.8
1500
$0.4462
$669.3
2000
$0.4416
$883.2
2500
$0.437
$1092.5
FMMT458TA Product Details
FMMT458TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 50mA 10V.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 6mA, 50mA.Continuous collector voltage should be kept at 225mA for high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Its current rating is 225mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.The part has a transition frequency of 50MHz.Breakdown input voltage is 400V volts.Maximum collector currents can be below 225mA volts.
FMMT458TA Features
the DC current gain for this device is 100 @ 50mA 10V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 6mA, 50mA the emitter base voltage is kept at 5V the current rating of this device is 225mA a transition frequency of 50MHz
FMMT458TA Applications
There are a lot of Diodes Incorporated FMMT458TA applications of single BJT transistors.