BSB017N03LX3 G

new-10%

Manufacturer part number:BSB017N03LX3 G

Manufacturer:Infineon Technologies

Description:N-Channel 30V 32A (Ta), 147A (Tc) 2.8W (Ta), 57W (Tc) Surface Mount MG-WDSON-2, CanPAK M?

Case Package:SOT-23

Datasheet:BSB017N03LX3 G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	3-WDSON
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	OptiMOS™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	NO LEAD
Reach Compliance Code	compliant
JESD-30 Code	R-MBCC-N3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.8W Ta 57W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.7m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7800pF @ 15V
Current - Continuous Drain (Id) @ 25°C	32A Ta 147A Tc
Gate Charge (Qg) (Max) @ Vgs	102nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	147A
Drain-source On Resistance-Max	0.0017Ohm
Pulsed Drain Current-Max (IDM)	400A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	225 mJ
RoHS Status	RoHS Compliant