BSL308PEH6327XTSA1

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BSL308PEH6327XTSA1

Manufacturer part number:BSL308PEH6327XTSA1

Manufacturer:Infineon Technologies

Description:BSL308PEH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSL308PEH6327XTSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	Automotive, AEC-Q101, OptiMOS™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Max Power Dissipation	500mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	5.6 ns
FET Type	2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs	80m Ω @ 2A, 10V
Vgs(th) (Max) @ Id	1V @ 11μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	5nC @ 10V
Rise Time	7.7ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	2.8 ns
Turn-Off Delay Time	15.3 ns
Continuous Drain Current (ID)	2A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	-30V
Drain Current-Max (Abs) (ID)	2A
Drain-source On Resistance-Max	0.08Ohm
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate, 4.5V Drive
Feedback Cap-Max (Crss)	18 pF
Height	1mm
Length	2.9mm
Width	1.6mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free