VMM650-01F

new-10%

Manufacturer part number:VMM650-01F

Manufacturer:IXYS

Description:MOSFET 2N-CH 100V 680A Y3-LI

Case Package:SOT-23

Datasheet:VMM650-01F Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	Y3-Li
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
Published	2004
Series	HiPerFET™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	9
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	VMM
JESD-30 Code	R-PUFM-X9
Qualification Status	Not Qualified
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.2m Ω @ 500A, 10V
Vgs(th) (Max) @ Id	4V @ 30mA
Gate Charge (Qg) (Max) @ Vgs	1440nC @ 10V
Rise Time	250ns
Drain to Source Voltage (Vdss)	100V
Fall Time (Typ)	250 ns
Turn-Off Delay Time	400 ns
Continuous Drain Current (ID)	680A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0018Ohm
Drain to Source Breakdown Voltage	100V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free