BSM150GB120DN2HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
BSM150GB120DN2HOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Operating Temperature
150°C TJ
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Configuration
Half Bridge
Power - Max
1250W
Input
Standard
Current - Collector Cutoff (Max)
2.8mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
210A
Vce(on) (Max) @ Vge, Ic
3V @ 15V, 150A
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
11nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$37.857680
$37.85768
10
$35.714792
$357.14792
100
$33.693200
$3369.32
500
$31.786038
$15893.019
1000
$29.986828
$29986.828
BSM150GB120DN2HOSA1 Product Details
BSM150GB120DN2HOSA1 Description
An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.