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BSM150GB120DN2HOSA1

BSM150GB120DN2HOSA1

BSM150GB120DN2HOSA1

Infineon Technologies

BSM150GB120DN2HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

BSM150GB120DN2HOSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mounting Type Chassis Mount
Package / Case Module
Operating Temperature 150°C TJ
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Configuration Half Bridge
Power - Max 1250W
Input Standard
Current - Collector Cutoff (Max) 2.8mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 210A
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 150A
NTC Thermistor No
Input Capacitance (Cies) @ Vce 11nF @ 25V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $37.857680 $37.85768
10 $35.714792 $357.14792
100 $33.693200 $3369.32
500 $31.786038 $15893.019
1000 $29.986828 $29986.828
BSM150GB120DN2HOSA1 Product Details

BSM150GB120DN2HOSA1                        Description


 An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.


BSM150GB120DN2HOSA1                        Features

? Half-bridge

? Including fast free-wheeling diodes

? Package with insulated metal base plate

 


 

BSM150GB120DN2HOSA1                        Applications

? Uninterruptible power supply

? Welding machines

? Photovoltaic inverters

? Power factor correction

? High frequency converters


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