BSP50H6327XTSA1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 2000 @ 500mA 10V.The collector emitter saturation voltage is 1.8V, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.8V @ 1mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.An input voltage of 45V volts is the breakdown voltage.Product comes in the supplier's device package PG-SOT223-4.Device displays Collector Emitter Breakdown (45V maximal voltage).Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BSP50H6327XTSA1 Features
the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1mA, 1A
the emitter base voltage is kept at 5V
the supplier device package of PG-SOT223-4
BSP50H6327XTSA1 Applications
There are a lot of Infineon Technologies BSP50H6327XTSA1 applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
