BSZ215CHXTMA1 Description

Fifth Generation HEXFETs from International Rectifier feature an incredibly low on-resistance per silicon area because to innovative production processes. In addition to the high switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, this feature gives the design an extremely efficient and reliable device for usage in a range of applications. Thanks to its improved thermal properties and multiple-die capacity, the SO-8 is the best choice for a variety of power applications. This alteration was made feasible by the use of a lead frame that was specially created. This invention allows for the usage of several devices while requiring noticeably less board space. The package is designed to function with wave or vapor phase infrared soldering methods.

BSZ215CHXTMA1 Features

• P + N complementary channel

• Improvement mode

• Level Super Logic (2.5V rated)

• Common sewer

• Rated Avalanche

• operating temperature of 175 ??C

• According to AEC Q101, qualified

BSZ215CHXTMA1 Applications

Switching applications