IGB03N120H2ATMA1

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Manufacturer part number:IGB03N120H2ATMA1

Manufacturer:Infineon Technologies

Description:IGB03N120H2ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IGB03N120H2ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e3
Pbfree Code	no
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	62.5W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	9.6A
Turn On Time	16.1 ns
Test Condition	800V, 3A, 82 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 3A
Turn Off Time-Nom (toff)	403 ns
Gate Charge	22nC
Current - Collector Pulsed (Icm)	9.9A
Td (on/off) @ 25°C	9.2ns/281ns
Switching Energy	290μJ
RoHS Status	ROHS3 Compliant