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HGT1S7N60A4DS

  • HGT1S7N60A4DS
  • HGT1S7N60A4DS

HGT1S7N60A4DS

HGT1S7N60A4DS

Rochester Electronics, LLC

HGT1S7N60A4DS datasheet pdf and Transistors - IGBTs - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

HGT1S7N60A4DS Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish MATTE TIN
Additional Feature LOW CONDUCTION LOSS
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 125W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 34ns
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 34A
Turn On Time 17 ns
Test Condition 390V, 7A, 25 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 7A
Turn Off Time-Nom (toff) 205 ns
Gate Charge 37nC
Current - Collector Pulsed (Icm) 56A
Td (on/off) @ 25°C 11ns/100ns
Switching Energy 55μJ (on), 60μJ (off)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.26000 $1.26
500 $1.2474 $623.7
1000 $1.2348 $1234.8
1500 $1.2222 $1833.3
2000 $1.2096 $2419.2
2500 $1.197 $2992.5
HGT1S7N60A4DS Product Details

HGT1S7N60A4DS Description


The MOS gated high voltage switching devices HGTG7N60A4D, HGTP7N60A4D, and HGT1S7N60A4DS combine the finest properties of MOSFETs with bipolar transistors. HGTG7N60A4D, HGTP7N60A4D, and HGT1S7N60A4DS have a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. Between 25oC and 150oC, the significantly smaller on-state voltage loss fluctuates relatively modestly. The TA49331 development type IGBT was used. The development type TA49370 diode is utilized in anti-parallel. This IGBT is suited for a variety of high-voltage switching applications with high frequencies and low conduction losses. HGT1S7N60A4DS is a high-frequency switch-mode power supply that has been optimized.



HGT1S7N60A4DS Features


  • >100kHz Operation At 390V, 7A

  • 200kHz Operation At 390V, 5A

  • 600V Switching SOA Capability

  • Typical Fall Time. . . . . . . . . . . . . . . . .  75ns at TJ = 125oC

  • Low Conduction Loss

  • Temperature Compensating SABER? Model 



HGT1S7N60A4DS Applications


  • Power Management

  • Computers & Computer Peripherals

  • Portable Devices

  • Industrial


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