STGB10NC60HDT4

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Manufacturer part number:STGB10NC60HDT4

Manufacturer:STMicroelectronics

Description:STGB10NC60HDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGB10NC60HDT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	NRND (Last Updated: 7 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerMESH™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	65W
Terminal Form	GULL WING
Base Part Number	STGB10
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Power Dissipation	65W
Input Type	Standard
Transistor Application	POWER CONTROL
Rise Time	5ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	20A
Reverse Recovery Time	22ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.5V
Max Breakdown Voltage	600V
Turn On Time	19 ns
Test Condition	390V, 5A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 5A
Turn Off Time-Nom (toff)	247 ns
Gate Charge	19.2nC
Current - Collector Pulsed (Icm)	30A
Td (on/off) @ 25°C	14.2ns/72ns
Switching Energy	31.8μJ (on), 95μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
Height	4.6mm
Length	10.4mm
Width	9.35mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free