STGD4M65DF2 Description

The STGD4M65DF2 IGBT was created using a cutting-edge, exclusive trench gate field-stop structure. The device is a member of the M series of IGBTs, which represent the performance and efficiency of an inverter system in which low-loss and short-circuit functionality are crucial. Additionally, the narrow parameter distribution and positive VCE(sat) temperature coefficient lead to safer paralleling operation.

STGD4M65DF2 Features

• Safer paralleling

• Low thermal resistance

• Tight parameter distribution

• VCE(sat) = 1.6 V (typ.) @ IC = 4 A

• 6 μs of short-circuit withstand time

• Soft and very fast recovery antiparallel diode

STGD4M65DF2 Applications

• Automotive

• Enterprise systems

• Communications equipment