IHW20T120FKSA1 Description

The IHW20T120FKSA1 is a Low Loss DuoPack: IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode. A three-terminal power semiconductor called an insulated-gate bipolar transistor (IGBT) is largely employed as an electronic switch. As IGBT technology advanced, it became possible to combine high efficiency with quick switching. The metal-oxide-semiconductor (MOS) gate structure governs its four alternating layers (P-N-P-N).

IHW20T120FKSA1 Features

• Very soft, fast recovery anti-parallel EmCon? HE diode

• Low EMI

• Qualified according to JEDEC1 for target applications

• Application specific optimisation of inverse diode

• Pb-free lead plating; RoHS compliant

• Short circuit withstand time – 10μs

• Designed for :

 - Soft Switching Applications

 - Induction Heating

• Trenchstop and Fieldstop technology for 1200 V applications offers:

 - very tight parameter distribution

 - high ruggedness, temperature stable behavior

 - easy parallel switching capability due to positive temperature coefficient in VCE(sat)

IHW20T120FKSA1 Applications

• It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.

• It is used in UPS (Uninterruptible Power Supply) system.

• It is used in AC and DC motor drives offering speed control.

• It is used in chopper and inverters.

• It is used in solar inverters.