STGBL6NC60DIT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGBL6NC60DIT4 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerMESH™
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
56W
Terminal Form
GULL WING
Base Part Number
STGBL6
Pin Count
4
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Input Type
Standard
Power - Max
56W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
14A
Reverse Recovery Time
23 ns
Collector Emitter Breakdown Voltage
600V
Max Breakdown Voltage
600V
Turn On Time
10.5 ns
Test Condition
390V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.9V @ 15V, 3A
Turn Off Time-Nom (toff)
122 ns
Gate Charge
12nC
Current - Collector Pulsed (Icm)
18A
Td (on/off) @ 25°C
6.7ns/46ns
Switching Energy
32μJ (on), 24μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.75V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
STGBL6NC60DIT4 Product Details
STGBL6NC60DIT4 Description
STGBL6NC60DIT4 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes STGBL6NC60DIT4 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.