NGTB40N120S3WG Description

This NGTB40N120S3WG Insulated Gate Bipolar Transistor (IGBT) has a durable and cost-effective Ultra Field Stop Trench structure that delivers outstanding performance in demanding switching applications while minimizing switching losses. The IGBT is ideal for applications that demand a rapid switching IGBT with low VF diodes, such as phase shifted full bridges. A free-wheeling diode with a low forward voltage is included in the device.

NGTB40N120S3WG Features

? Field Stop Technology for Extremely Efficient Trenching

? TJmax = 175°C

? Reverse Diode with Low VF

? High-speed switching optimized

? These devices are free of lead.

NGTB40N120S3WG Applications

? Welding

? UPS (Uninterruptible Power Supply) (UPS)

? Motor Management